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SPD30N03S2L07T

30V|30A (Tc)|136W (Tc)
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MOSFET N-CH 30V 30A DPAK

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

229pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SPD30N03S2L07T from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

spd30n03s2l07t.pdf

PDF Document · 8 pages

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