Heisener Electronics
BOM

SPD08N50C3ATMA1

500V|7.6A (Tc)|83W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 500V 7.6A DPAK

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-1
Packaging
—
Weight
—

Total Inventory

3,697pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SPD08N50C3ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-1
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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