黑森尔电子
BOM

SPD07N60S5BTMA1

600 V|7.3A (Tc)|83W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠

N-CHANNEL POWER MOSFET

规格参数

品牌
Infineon Technologies
封装
PG-TO252
包装方式
—

库存总量

0个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Infineon Technologies 的 SPD07N60S5BTMA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

  • 原厂采购,全程可追溯
  • 严格的进料品质检验
  • 具竞争力的价格 & 全球快速交货
  • 专属应用工程技术支持

技术规格

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds970 pF @ 25 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

推荐产品

RWR89S1210BRS70

RWR89S1210BRS70

RES 121 OHM 3W 0.1% WW AXIAL

SIT8208AI-33-28S-74-250000Y

SIT8208AI-33-28S-74-250000Y

MEMS OSC XO 74.2500MHZ LVCMOS LV

2225Y0630270FCT

2225Y0630270FCT

CAP CER 27PF 63V C0G/NP0 2225

1206Y0250101MDR

1206Y0250101MDR

CAP CER 100PF 25V X7R 1206

MAL203127479E3

MAL203127479E3

CAP ALUM 47UF 40V AXIAL

ATSAMD10D13A-MNT

ATSAMD10D13A-MNT

IC MCU 32BIT 8KB FLASH 24QFN

AON7400B_101

AON7400B_101

MOSFET N-CH 30V 30A 8DFN

DWM-25-51-SM-D-290

DWM-25-51-SM-D-290

.050" BOARD SPACERS

L717DFB25P1AMNVFM

L717DFB25P1AMNVFM

CONN D-SUB PLUG 25POS R/A SOLDER

RCM22DRMN-S288

RCM22DRMN-S288

CONN EDGE DUAL FMALE 44POS 0.156