Heisener Electronics
BOM

SPD06N60C3ATMA1

600V|6.2A (Tc)|74W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 6.2A TO-252

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3-1
Packaging
—
Weight
—

Total Inventory

397pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SPD06N60C3ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-1
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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