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100V|35A (Tc)|150W (Tc)
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MOSFET N-CH 100V 35A D2PAK
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3-2
- Packaging
- —
- Weight
- —
Total Inventory
455pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SPB35N10T from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 26.4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 83µA | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Datasheet & Documents
spb35n10-g.pdf
PDF Document · 8 pages
