Heisener Electronics
BOM

SMMJT350T3G

300V|500mA|2.75W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

BIP S0T223 PNP 0.5A 300V

Specifications

Brand
ON Semiconductor
Package
TO-261-4, TO-261AA
Packaging
—
Weight
—

Total Inventory

171pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SMMJT350T3G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)300V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max2.75W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

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Datasheet & Documents

mmjt350t1.pdf

PDF Document · 5 pages

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Datasheet Preview

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