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30V|27.6A (Ta), 40A (Tc)|3.7W (Ta), 46.3W (Tc)
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MOSFET N-CH 30V
Specifications
- Brand
- Vishay Siliconix
- Package
- PowerPAK® 1212-8
- Packaging
- —
- Weight
- —
Total Inventory
3,627pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SISC06DN-T1-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® Gen IV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 27.6A (Ta), 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | |
| Vgs (Max) | +20V, -16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2455pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.7W (Ta), 46.3W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Package / Case | PowerPAK® 1212-8 |
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PROTOTYPE
Datasheet & Documents
sisc06dn-t1-ge3.pdf
PDF Document · 9 pages
