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SIHF080N60E-GE3

600 V|14A (Tc)|35W (Tc)
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E SERIES POWER MOSFET TO-220 FUL

Specifications

Brand
Vishay Siliconix
Package
TO-220 Full Pack
Packaging
—
Weight
—

Total Inventory

4,980pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SIHF080N60E-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2557 pF @ 100 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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