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600 V|10 A|-
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IGBT 3 CHIP 600V WAFER
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SIGC12T60SNCX7SA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | NPT | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Current - Collector (Ic) (Max) | 10 A | |
| Current - Collector Pulsed (Icm) | 30 A | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A | |
| Power - Max | - | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 29ns/266ns | |
| Test Condition | 400V, 10A, 25Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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