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1200V|35A (DC)
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DIODE GEN PURP 1.2KV 35A WAFER
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
7,232pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SIDC30D120F6 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Current - Average Rectified (Io) | 35A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 35A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 27µA @ 1200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Sawn on foil | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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