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600V|4A (DC)
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DIODE SCHOTTKY 600V 4A WAFER
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
131pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SIDC11D60SIC3 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 4A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 200µA @ 600V | |
| Capacitance @ Vr, F | 150pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Sawn on foil | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Datasheet & Documents
sidc11d60sic3.pdf
PDF Document · 4 pages
