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SIA462DJ-T1-GE3

30V|12A (Tc)|3.5W (Ta), 19W (Tc)
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MOSFET N-CH 30V 12A SC-70-6L

Specifications

Brand
Vishay Siliconix
Package
PowerPAK® SC-70-6 Single
Packaging
—
Weight
—

Total Inventory

326pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SIA462DJ-T1-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 15V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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Datasheet & Documents

sia462dj-t1-ge3.pdf

PDF Document · 9 pages

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