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150V|2.6A|1.4W
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MOSFET 2N-CH 150V 2.6A PPAK SO-8
Specifications
- Brand
- Vishay Siliconix
- Package
- PowerPAK® SO-8 Dual
- Packaging
- —
- Weight
- —
Total Inventory
452pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SI7956DP-T1-E3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 4.1A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.4W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SO-8 Dual | |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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Datasheet & Documents
si7956dp-t1-e3.pdf
PDF Document · 12 pages
