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SI7635DP-T1-GE3

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付款方式：

Part Number

SI7635DP-T1-GE3

Manufacturer

Vishay Siliconix

Description

MOSFET P-CH 20V 40A PPAK SO-8

Lifecycle

Obsolete

RoHS

No RoHS Information

EDA/CAD Models

SI7635DP-T1-GE3 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:181 pcs

运送服务：

SI7635DP-T1-GE3 规格

Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
4595pF @ 10V
Manufacturer
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
5W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs
4.9mOhm @ 26A, 10V
Series
TrenchFET®
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±16V
Vgs(th) (Max) @ Id
2.2V @ 250µA

SI7635DP-T1-GE3 标签

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