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SI7456CDP-T1-GE3

100V|27.5A (Tc)|5W (Ta), 35.7W (Tc)
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MOSFET N-CH 100V 27.5A PPAK SO-8

Specifications

Brand
Vishay Siliconix
Package
PowerPAK® SO-8
Packaging
—
Weight
—

Total Inventory

139pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SI7456CDP-T1-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C27.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds730pF @ 50V
FET Feature-
Power Dissipation (Max)5W (Ta), 35.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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Datasheet & Documents

si7456cdp-t1-ge3.pdf

PDF Document · 7 pages

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