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30V|-|1.5W (Ta)
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MOSFET N-CH 30V 7.8A 8-TSSOP
Specifications
- Brand
- Vishay Siliconix
- Package
- 8-TSSOP
- Packaging
- —
- Weight
- —
Total Inventory
430pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SI6410DQ-T1-E3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 7.8A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSSOP | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
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Datasheet & Documents
si6410dq-t1-ge3.pdf
PDF Document · 5 pages
