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20V|4A|3.1W
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MOSFET 2P-CH 20V 4A 1206-8
Specifications
- Brand
- Vishay Siliconix
- Package
- 8-SMD, Flat Lead
- Packaging
- —
- Weight
- —
Total Inventory
283pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SI5935CDC-T1-E3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4A | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V | |
| Power - Max | 3.1W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Supplier Device Package | 1206-8 ChipFET™ |
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Datasheet & Documents
si5935cdc-t1-e3.pdf
PDF Document · 11 pages
