Heisener Electronics
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SI3139KL3B-TP

20 V|650mA (Ta)|328mW (Tj)
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MOSFET

Specifications

Brand
Micro Commercial Co
Package
DFN1006-3
Packaging
—
Weight
—

Total Inventory

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SI3139KL3B-TP from Micro Commercial Co fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicro Commercial Co
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C650mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs850mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 10 V
FET Feature-
Power Dissipation (Max)328mW (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1006-3
Package / CaseSC-101, SOT-883

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