Heisener Electronics
BOM

SI3139KL3-TP

20 V|660mA (Ta)|100mW
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MOSFET P-CH 20V 660MA DFN1006-3

Specifications

Brand
Micro Commercial Co
Package
DFN1006-3
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SI3139KL3-TP from Micro Commercial Co fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicro Commercial Co
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs500mOhm @ 150mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds113 pF @ 16 V
FET Feature-
Power Dissipation (Max)100mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1006-3
Package / CaseSC-101, SOT-883

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