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30V|5.8A (Tc)|1.25W (Ta), 2.1W (Tc)
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MOSFET N-CH 30V 5.8A SOT-23
Specifications
- Brand
- Vishay Siliconix
- Package
- SOT-23-3 (TO-236)
- Packaging
- —
- Weight
- —
Total Inventory
142pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SI2366DS-T1-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 335pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Datasheet & Documents
si2366ds-t1-ge3.pdf
PDF Document · 10 pages
