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8V|1.34A (Ta)|236mW (Ta)
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MOSFET N-CH 8V 1.34A SC-89-6
Specifications
- Brand
- Vishay Siliconix
- Package
- SC-89-6
- Packaging
- —
- Weight
- —
Total Inventory
25,469pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SI1050X-T1-GE3 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 8V | |
| Current - Continuous Drain (Id) @ 25°C | 1.34A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 1.34A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 5V | |
| Vgs (Max) | ±5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 4V | |
| FET Feature | - | |
| Power Dissipation (Max) | 236mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-89-6 | |
| Package / Case | SOT-563, SOT-666 |
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Datasheet & Documents
si1050x-t1-e3.pdf
PDF Document · 8 pages
