Heisener Electronics
BOM

SGT120R65AL

650 V|15A (Tc)|192W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

650 V, 75 MOHM TYP., 15 A, E-MOD

Specifications

Brand
STMicroelectronics
Package
PowerFlat™ (5x6) HV
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SGT120R65AL from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V
Rds On (Max) @ Id, Vgs120mOhm @ 5A, 6V
Vgs(th) (Max) @ Id2.6V @ 12mA
Gate Charge (Qg) (Max) @ Vgs3 nC @ 6 V
Vgs (Max)+6V, -10V
Input Capacitance (Ciss) (Max) @ Vds125 pF @ 400 V
FET Feature-
Power Dissipation (Max)192W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (5x6) HV
Package / Case8-PowerVDFN

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