Heisener Electronics
BOM

SFAS808G

600 V|8A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 8A TO263AB

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
—
Weight
—

Total Inventory

2,343pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SFAS808G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
Current - Reverse Leakage @ Vr10 µA @ 600 V
Capacitance @ Vr, F60pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D2PAK)
Operating Temperature - Junction-55°C ~ 150°C

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