Heisener Electronics
BOM

SF803GHC0G_1

150V|8A
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DIODE GEN PURP 150V 8A TO220AB

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

473pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SF803GHC0G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)150V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If975mV @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr10µA @ 150V
Capacitance @ Vr, F70pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Operating Temperature - Junction-55°C ~ 150°C

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