SE10FJHM3-H
600V|1A
原装正品全球货源快速交付品质认证技术支持批量优惠
DIODE GEN PURP 600V 1A DO219AB
规格参数
- 品牌
- Vishay Semiconductor Diodes Division
- 封装
- DO-219AB
- 包装方式
- —
库存总量
185个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Vishay Semiconductor Diodes Division 的 SE10FJHM3-H 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | Automotive, AEC-Q101 | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.05V @ 1A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 780ns | |
| Current - Reverse Leakage @ Vr | 5µA @ 600V | |
| Capacitance @ Vr, F | 7.5pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-219AB | |
| Supplier Device Package | DO-219AB (SMF) | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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数据手册与文档
se10fjhm3-h.pdf
PDF文档 · 6 pages
