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650 V|119A (Tc)|565W (Tc)
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SILICON CARBIDE POWER MOSFET 650
Specifications
- Brand
- STMicroelectronics
- Package
- TO-247 Long Leads
- Packaging
- —
- Weight
- —
Total Inventory
24pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCTWA90N65G2V from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V | |
| Vgs (Max) | +22V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 565W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 Long Leads | |
| Package / Case | TO-247-3 |
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