Contact
Send MessageSCTWA50N120
1200V|65A (Tc)|318W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 1200V 65A HIP247
Specifications
- Brand
- STMicroelectronics
- Package
- HiP247™
- Packaging
- —
- Weight
- —
Total Inventory
720pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCTWA50N120 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V | |
| Vgs (Max) | +25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 318W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Package / Case | TO-247-3 |
Recommended Products
RES MF 1W 1% AXIAL
FIXED IND 22UH 57MA 7.5 OHM SMD
MEMS OSC XO 10.0000MHZ H/LV-CMOS
CAP CER 10000PF 100V X7R 0603
IC ADC 12BIT SAR 8SOIC
RF TRANS NPN 5V 4GHZ USM
BOARD DEMO WIRELESSHART RF CERT
CONN SPRING LOAD 16POS SMT 5.5MM
3+3 DIL HORIZ PIN HDR
CONN D-SUB PLUG 25POS R/A SOLDER
Datasheet & Documents
sctwa50n120.pdf
PDF Document · 11 pages
