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650V|90A (Tc)|390W (Tc)
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SILICON CARBIDE POWER MOSFET 650
Specifications
- Brand
- STMicroelectronics
- Package
- HiP247™
- Packaging
- —
- Weight
- —
Total Inventory
361pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCTW90N65G2V from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V | |
| Vgs (Max) | +22V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 390W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Package / Case | TO-247-3 |
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Datasheet & Documents
sctw90n65g2v.pdf
PDF Document · 12 pages
