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1200V|65A (Tc)|318W (Tc)
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MOSFET N-CH 1.2KV TO247-3
Specifications
- Brand
- STMicroelectronics
- Package
- HiP247™
- Packaging
- —
- Weight
- —
Total Inventory
1,116pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCT50N120 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V | |
| Vgs (Max) | +25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 318W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Package / Case | TO-247-3 |
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Datasheet & Documents
sct50n120.pdf
PDF Document · 11 pages
