Heisener Electronics
BOM

SCT4062KEC11

1200 V|26A (Tc)|115W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

1200V, 62M, 3-PIN THD, TRENCH-ST

Specifications

Brand
Rohm Semiconductor
Package
TO-247N
Packaging
—
Weight
—

Total Inventory

14,070pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SCT4062KEC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 18 V
Vgs (Max)+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds1498 pF @ 800 V
FET Feature-
Power Dissipation (Max)115W
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247N
Package / CaseTO-247-3

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