Heisener Electronics
BOM

SCT3105KRC14

1200 V|24A (Tc)|134W
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SICFET N-CH 1200V 24A TO247-4L

Specifications

Brand
Rohm Semiconductor
Package
TO-247-4L
Packaging
—
Weight
—

Total Inventory

306pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SCT3105KRC14 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs137mOhm @ 7.6A, 18V
Vgs(th) (Max) @ Id5.6V @ 3.81mA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 18 V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds574 pF @ 800 V
FET Feature-
Power Dissipation (Max)134W
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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