Heisener Electronics
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SCT3080ALGC11

650V|30A (Tc)|134W (Tc)
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MOSFET N-CH 650V 30A TO247

Specifications

Brand
Rohm Semiconductor
Package
TO-247N
Packaging
—
Weight
—

Total Inventory

1,904pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SCT3080ALGC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs48nC @ 18V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds571pF @ 500V
FET Feature-
Power Dissipation (Max)134W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247N
Package / CaseTO-247-3

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