Heisener Electronics
BOM

SCT3030AW7TL

650 V|70A (Tc)|267W
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SICFET N-CH 650V 70A TO263-7

Specifications

Brand
Rohm Semiconductor
Package
TO-263-7
Packaging
โ€”
Weight
โ€”

Total Inventory

1,311pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SCT3030AW7TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25ยฐC70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 18 V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds1526 pF @ 500 V
FET Feature-
Power Dissipation (Max)267W
Operating Temperature175ยฐC (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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