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650 V|118A (Tc)|427W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
650V, 118A, THD, TRENCH-STRUCTUR
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-247N
- Packaging
- —
- Weight
- —
Total Inventory
1,323pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCT3017ALGC11 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 118A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 47A, 18V | |
| Vgs(th) (Max) @ Id | 5.6V @ 23.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 18 V | |
| Vgs (Max) | +22V, -4V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2884 pF @ 500 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 427W | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247N | |
| Package / Case | TO-247-3 |
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