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1200V|14A (Tc)|108W (Tc)
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MOSFET N-CH 1200V 14A TO-247
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-247
- Packaging
- —
- Weight
- —
Total Inventory
3,118pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SCT2280KEC from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V | |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 18V | |
| Vgs (Max) | +22V, -6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 667pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 108W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 | |
| Package / Case | TO-247-3 |
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Datasheet & Documents
sct2280kec.pdf
PDF Document · 14 pages
