Heisener Electronics
BOM

SBSP52T1G

80V|1A|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN DARL 80V 1A SOT223

Specifications

Brand
ON Semiconductor
Package
TO-261-4, TO-261AA
Packaging
—
Weight
—

Total Inventory

187pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SBSP52T1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Power - Max800mW
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

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Datasheet & Documents

bsp52t3.pdf

PDF Document · 4 pages

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Datasheet Preview

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