Heisener Electronics
BOM

S6JR

600V|6A
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DIODE GEN PURP REV 600V 6A DO4

Specifications

Brand
GeneSiC Semiconductor
Package
DO-203AA, DO-4, Stud
Packaging
—
Weight
—

Total Inventory

209pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how S6JR from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)6A
Voltage - Forward (Vf) (Max) @ If1.1V @ 6A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 100V
Capacitance @ Vr, F-
Mounting TypeChassis, Stud Mount
Package / CaseDO-203AA, DO-4, Stud
Supplier Device PackageDO-4
Operating Temperature - Junction-65°C ~ 175°C

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Datasheet & Documents

s6jr.pdf

PDF Document · 3 pages

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