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600V|4A
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DIODE GEN PURP 600V 4A TO277A
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- TO-277, 3-PowerDFN
- Packaging
- —
- Weight
- —
Total Inventory
2,833pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how S4PJHM3_A-H from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | Automotive, AEC-Q101, eSMP® | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 4A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 4A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 2.5µs | |
| Current - Reverse Leakage @ Vr | 10µA @ 600V | |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-277, 3-PowerDFN | |
| Supplier Device Package | TO-277A (SMPC) | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Datasheet & Documents
s4pmhm3-86a.pdf
PDF Document · 5 pages
