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1200 V|10A
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DIODE SIL CARBIDE 1.2KV 10A 5DFN
Specifications
- Brand
- SMC Diode Solutions
- Package
- 4-VSFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
1,449pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how S4D10120L1 from SMC Diode Solutions fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | SMC Diode Solutions | |
| Series | - | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 30 µA @ 1200 V | |
| Capacitance @ Vr, F | 772pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-VSFN Exposed Pad | |
| Supplier Device Package | 5-DFN (8x8) | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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