Heisener Electronics
BOM

S1JL-R3G_1

600V|1A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 1A SUB SMA

Specifications

Brand
Taiwan Semiconductor Corporation
Package
DO-219AB
Packaging
—
Weight
—

Total Inventory

403pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how S1JL-R3G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.8µs
Current - Reverse Leakage @ Vr5µA @ 600V
Capacitance @ Vr, F9pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 175°C

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Datasheet & Documents

s1jlr2g.pdf

PDF Document · 4 pages

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Datasheet Preview

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