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S1FLJ-GS18

600V|700mA
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DIODE GEN PURP 600V 1A DO219AB

Specifications

Brand
Vishay Semiconductor Diodes Division
Package
DO-219AB
Packaging
—
Weight
—

Total Inventory

297pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how S1FLJ-GS18 from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)700mA
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.8µs
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F4pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)
Operating Temperature - Junction-55°C ~ 150°C

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Datasheet & Documents

s1flk-gs08.pdf

PDF Document · 5 pages

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Datasheet Preview

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