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RZF020P01TL

12V|2A (Ta)|800mW (Ta)
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MOSFET P-CH 12V 2A TUMT3

Specifications

Brand
Rohm Semiconductor
Package
TUMT3
Packaging
—
Weight
—

Total Inventory

307pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RZF020P01TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs105mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds770pF @ 6V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTUMT3
Package / Case3-SMD, Flat Leads

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Datasheet & Documents

rzf020p01tl.pdf

PDF Document · 13 pages

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