Heisener Electronics
BOM

RX3P12BATC16

100 V|120A (Tc)|201W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

PCH -100V -120A POWER MOSFET: RX

Specifications

Brand
Rohm Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

2,571pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RX3P12BATC16 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs385 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16600 pF @ 50 V
FET Feature-
Power Dissipation (Max)201W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Recommended Products

ERJ-S1DF95R3U

ERJ-S1DF95R3U

RES SMD 95.3 OHM 1% 3/4W 2010

SIT8208AI-G3-33S-10-000000T

SIT8208AI-G3-33S-10-000000T

MEMS OSC XO 10.0000MHZ LVCMOS LV

C1210X200M8HAC7800

C1210X200M8HAC7800

CAP CER 1210 20PF 10V ULTRA STAB

B43851A5225M000

B43851A5225M000

CAP ALUM 2.2UF 20% 450V RADIAL

UPM1C181MED1TD

UPM1C181MED1TD

CAP ALUM 180UF 20% 16V RADIAL

MKS2PN-D-DC6

MKS2PN-D-DC6

RELAY GEN PURPOSE DPDT 10A 6V

1655L3A55

1655L3A55

TRANSMITTER TOSA

EZR32HG220F64R67G-B0R

EZR32HG220F64R67G-B0R

IC RF TXRX+MCU 802.15.4 48-QFN

MS27473P22F55S

MS27473P22F55S

JT 55C 55#20 SKT PLUG