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30V|1.5A (Ta)|400mW (Ta)
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MOSFET P-CH 30V 1.5A WEMT6
Specifications
- Brand
- Rohm Semiconductor
- Package
- 6-WEMT
- Packaging
- —
- Weight
- —
Total Inventory
435pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RW1E015RPT2R from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-WEMT | |
| Package / Case | SOT-563, SOT-666 |
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