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RV1C002UNT2CL

20V|150mA (Ta)|100mW (Ta)
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MOSFET N-CH 20V 0.15A VML0806

Specifications

Brand
Rohm Semiconductor
Package
VML0806
Packaging
—
Weight
—

Total Inventory

255,040pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RV1C002UNT2CL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs2Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds12pF @ 10V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVML0806
Package / Case3-SMD, No Lead

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