Contact
Send MessageRUT2012JR200CS
Thick Film|0.25W, 1/4W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
RES 0.2 OHM 5% 1/4W 0805
Specifications
- Brand
- Samsung
- Package
- 0805 (2012 Metric)
- Packaging
- —
- Weight
- —
Total Inventory
254pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RUT2012JR200CS from Samsung fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Samsung Electro-Mechanics | |
| Series | RUT | |
| Resistance | 200 mOhms | |
| Tolerance | ±5% | |
| Power (Watts) | 0.25W, 1/4W | |
| Composition | Thick Film | |
| Features | Current Sense, Moisture Resistant | |
| Temperature Coefficient | ±150ppm/°C | |
| Operating Temperature | -55°C ~ 155°C | |
| Package / Case | 0805 (2012 Metric) | |
| Supplier Device Package | 0805 | |
| Size / Dimension | 0.079" L x 0.049" W (2.00mm x 1.25mm) | |
| Height - Seated (Max) | 0.024" (0.61mm) | |
| Number of Terminations | 2 | |
| Failure Rate | - |
Recommended Products
CPS16-NO00A10-SNCCWTWF-AI0MRVAR-W1035-S
SWITCH PUSH SPST-NO 100MA 42V
SENSOR 500PSI 3/8-24 UNF 1-5V
NMP CONFIGURABLE POWER SUPPLY 12
DC DC CONVERTER 5.8V 25W
DC DC CONVERTER +/-12V 3W
IC NVSRAM 2M PARALLEL 40EDIP
DIODE ZENER 22V 300MW SOT23
CONN EDGE DUAL FMALE 10POS 0.100
RF MOSFET LDMOS
PROTOTYPE
