Contact
Send MessageRUT2012FR180CS
Thick Film|0.25W, 1/4W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
RES 0.18 OHM 1% 1/4W 0805
Specifications
- Brand
- Samsung
- Package
- 0805 (2012 Metric)
- Packaging
- —
- Weight
- —
Total Inventory
142pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RUT2012FR180CS from Samsung fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Samsung Electro-Mechanics | |
| Series | RUT | |
| Resistance | 180 mOhms | |
| Tolerance | ±1% | |
| Power (Watts) | 0.25W, 1/4W | |
| Composition | Thick Film | |
| Features | Current Sense, Moisture Resistant | |
| Temperature Coefficient | ±150ppm/°C | |
| Operating Temperature | -55°C ~ 155°C | |
| Package / Case | 0805 (2012 Metric) | |
| Supplier Device Package | 0805 | |
| Size / Dimension | 0.079" L x 0.049" W (2.00mm x 1.25mm) | |
| Height - Seated (Max) | 0.024" (0.61mm) | |
| Number of Terminations | 2 | |
| Failure Rate | - |
Recommended Products
RES 129.3658 OHM 0.6W 0.01% RAD
MEMS OSC XO 14.0000MHZ H/LV-CMOS
CAP ALUM 6800UF 20% 550V SCREW
CAP ALUM 3900UF 20% 16V RADIAL
IC REG LINEAR 1.5V 300MA SOT25
IC CPLD 96MC 15NS 84PLCC
DIODE GEN PURP 1KV 8A TO220-2
N-CHANNEL MOSFET, 2.5V. MOSFETS
IC CPLD 128MC 10NS 100QFP
DIODE GEN PURP 200V 3A D-5B
