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RUM003N02T2L

20V|300mA (Ta)|150mW (Ta)
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MOSFET N-CH 20V 300MA VMT3

Specifications

Brand
Rohm Semiconductor
Package
VMT3
Packaging
—
Weight
—

Total Inventory

50,632pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RUM003N02T2L from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Rds On (Max) @ Id, Vgs1Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVMT3
Package / CaseSOT-723

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Datasheet & Documents

rum003n02t2l.pdf

PDF Document · 4 pages

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