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20V|100mA (Ta)|150mW (Ta)
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MOSFET N-CH 20V 0.1A VMT3
Specifications
- Brand
- Rohm Semiconductor
- Package
- VMT3
- Packaging
- —
- Weight
- —
Total Inventory
259,551pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how RUM001L02T2CL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | VMT3 | |
| Package / Case | SOT-723 |
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Datasheet & Documents
rum001l02t2cl.pdf
PDF Document · 12 pages
