Heisener Electronics
BOM

RU1C002UNTCL

20V|200mA (Ta)|150mW (Ta)
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MOSFET N-CH 20V 0.2A UMT3F

Specifications

Brand
Rohm Semiconductor
Package
UMT3F
Packaging
—
Weight
—

Total Inventory

275pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how RU1C002UNTCL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 2.5V
Rds On (Max) @ Id, Vgs1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUMT3F
Package / CaseSC-85

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